This document describes the FQPF30N06L 60V logic N-channel MOSFET produced by Fairchild Semiconductor Corporation. The device is manufactured using advanced DMOS technology, providing low on-state resistance, superior switching performance, and high energy pulse tolerance. It is suitable for low voltage applications such as automotive, DC/DC converters, and portable battery-operated products.
The FQPF30N06L is a 60 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as automotive, DC‑DC converters, and high‑efficiency power management in portable products.
Key features include a continuous drain current of 22.5 A at 25 °C, low typical gate charge of 15 nC, low output capacitance, fast switching, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package and is rated for 100 % avalanche testing.
| Drain‑Source Voltage (VDS) | 60 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 22.5 A |
| Gate‑Source Voltage (VGS) | ±20 V |
| On‑Resistance (RDS(on)) typical | 0.035 Ω |
| Typical Gate Charge (Qg) | 15 nC |
| Maximum Junction Temperature | 175 °C |
| Thermal Resistance Junction‑to‑Case (RθJC) | 3.9 °C·W |
The device can handle a continuous drain current of 22.5 A at a junction temperature of 25 °C.
The MOSFET is rated for a maximum drain‑source voltage of 60 V.
The typical gate charge is 15 nC.
It is supplied in a TO‑220F package.