FQPF2P40 is a 400V P-channel MOSFET produced by Fairchild. It features RDS(on) = 6.5Ω @VGS = -10 V, low gate charge (typical 10 nC), low Crss (typical 6.5 pF), fast switching, 100% avalanche tested, and improved dv/dt capability.
The FQPF2P40 is a P‑Channel enhancement mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is designed for low on‑state resistance, fast switching, and high‑energy avalanche capability, making it suitable for electronic lamp ballasts and half‑bridge topologies.
Key specifications include a maximum drain‑source voltage of –400 V, continuous drain current of –1.34 A (–0.85 A at 100 °C), typical gate charge of 10 nC, and low input/output capacitances (Ciss ≈ 270 pF, Coss ≈ 45 pF). The device is packaged in a TO‑220F case with a thermal resistance of 4.46 °C/W (junction‑to‑case) and can dissipate up to 28 W at 25 °C.
| Drain‑Source Voltage (VDS) | -400 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | -1.34 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Total Gate Charge (Qg) | 10 nC (typical) |
| Reverse Transfer Capacitance (Crss) | 6.5 pF (typical) |
| Power Dissipation (P_D) | 28 W (at 25 °C) |
| Thermal Resistance Junction‑to‑Case (RθJC) | 4.46 °C/W |
The device can withstand a drain‑source voltage of up to –400 V.
The typical total gate charge is 10 nC.
The continuous drain current is –1.34 A at a junction temperature of 25 °C.
The junction‑to‑case thermal resistance is 4.46 °C/W.