This document is an introduction to the FQS4410 QFET product from Fairchild Semiconductor International. The product is a single-channel N-channel enhancement mode power field effect transistor with low resistance, excellent switching performance, and high energy pulse withstand capability. It is suitable for low voltage applications such as DC/DC converters and portable battery-operated products.
The FQS4410 is an N‑channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is optimized for low on‑state resistance and fast switching, making it suitable for low‑voltage DC‑DC converters and portable battery‑powered products.
Key features include a 30 V drain‑source rating, 10 A continuous drain current, low gate charge (≈21 nC), low reverse transfer capacitance (≈145 pF), and a maximum junction temperature of 175 °C. The datasheet provides detailed electrical characteristics, thermal data, switching waveforms, and package dimensions for design engineers.
| Drain‑Source Voltage (V_DSS) | 30 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | 10 A |
| Pulsed Drain Current (I_DM) | 50 A |
| Gate‑Source Voltage (V_GS) | ±20 V |
| On‑Resistance (R_DS(on)) @ V_GS=10 V | 0.0135 Ω |
| Typical Gate Charge (Q_g) | 21 nC |
| Typical Reverse Transfer Capacitance (C_rss) | 145 pF |
| Maximum Junction Temperature (T_J) | 175 °C |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 50 °C/W |
The maximum drain‑source voltage is 30 V.
The typical gate charge is about 21 nC.
The on‑resistance is 0.0135 Ω under those conditions.