The FQS4900 is a dual N and P-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high interface in telephone sets.
The FQS4900 is a dual N‑ and P‑channel enhancement‑mode power MOSFET fabricated with Fairchild's planar stripe DMOS technology. It is designed for low on‑state resistance, fast switching, and high avalanche capability, making it suitable for high‑interface applications such as telephone sets.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, typical performance curves, and the 8‑SOP package dimensions. It also includes trademark information, a disclaimer on life‑support usage, and product status definitions.
| Drain-Source Voltage (Vds) | 60 V (N‑channel), –300 V (P‑channel) |
|---|---|
| Continuous Drain Current (Id) at 25 °C | 1.3 A (N‑channel), –0.3 A (P‑channel) |
| Total Gate Charge (Qg) | 1.6 nC (N‑channel), 3.6 nC (P‑channel) |
| Power Dissipation (Pd) at 25 °C | 2.0 W |
| Package | 8‑SOP |
The N‑channel is rated for 60 V and the P‑channel for –300 V.
The device can handle 1.3 A continuously for the N‑channel and –0.3 A for the P‑channel.
The FQS4900 is supplied in an 8‑SOP package.
No, Fairchild states the product is not authorized for use as a critical component in life‑support devices.