FQT13N06L is a 60V LOGIC N-Channel MOSFET from Fairchild Semiconductor. It features low on-state resistance, superior switching performance, high energy pulse withstand capability in the avalanche and commutation mode, and improved dv/dt capability.
The FQT13N06L is a 60 V N‑Channel enhancement‑mode power MOSFET with a typical continuous drain current of 2.8 A and low gate charge (≈4.8 nC). It is designed for low‑voltage applications such as automotive, DC‑DC converters, and portable power management, offering fast switching and improved dv/dt capability.
Key specifications include a drain‑source voltage of 60 V, pulsed drain current of 11.2 A, on‑resistance around 0.11 Ω, total gate charge of 48 nC, and a junction‑to‑ambient thermal resistance of 60 °C/W. The device is supplied in an SOT‑223 package, and the datasheet includes typical characteristic curves and test circuit diagrams for performance verification.
| Drain‑Source Voltage (V_DSS) | 60 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 2.8 A |
| Pulsed Drain Current | 11.2 A |
| Gate‑Source Voltage (V_GS) | ±20 V |
| On‑Resistance (R_DS(on)) | 0.11 Ω (typical) |
| Total Gate Charge (Q_g) | 48 nC |
| Thermal Resistance, Junction‑to‑Ambient | 60 °C/W |
| Package | SOT‑223 |
The device can withstand up to 60 V between drain and source.
It is rated for a continuous drain current of 2.8 A at 25 °C.
The typical on‑resistance is about 0.11 Ω at V_GS = 5 V and I_D = 14 A.
The MOSFET is supplied in an SOT‑223 surface‑mount package.