This is a PDF file about QFET. QFET is a kind of field effect transistor.
The FQPF9N15 is a 150 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as audio amplifiers, DC‑DC converters and motor control, offering low on‑state resistance, fast switching and high avalanche capability.
Key electrical characteristics include a continuous drain current of 6.9 A at 25 °C, a pulsed rating of 27.6 A, an on‑resistance of 0.42 Ω at Vgs = 10 V, and a total gate charge of about 13 nC. The device is supplied in a TO‑220F package with a maximum junction temperature of 175 °C and thermal resistance of 3.38 °C·W (junction‑to‑case).
| Drain‑Source Voltage (VDS) | 150 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 6.9 A |
| Pulsed Drain Current (ID) (Note 1) | 27.6 A |
| On‑Resistance (RDS(on)) at VGS = 10 V | 0.42 Ω |
| Thermal Resistance, Junction‑to‑Case | 3.38 °C·W |
| Maximum Junction Temperature | 175 °C |
| Package | TO‑220F |
The device is rated for a maximum drain‑source voltage of 150 V.
It can handle a continuous drain current of 6.9 A at 25 °C.
The MOSFET is supplied in a TO‑220F package.