FQPF9N30 is a N-channel enhancement mode power field effect transistor produced by Fairchild. The transistor uses Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, superior switching performance, and high energy pulse endurance. It is suitable for high-efficiency switching DC/DC converters and switch mode power supplies.
The FQPF9N30 MOSFET is a 300 V N‑Channel enhancement mode power transistor built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching in DC/DC converters and switch‑mode power supplies.
Key specifications include a continuous drain current of 6 A at 25 °C, a pulsed rating of 24 A, low on‑resistance (0.452 Ω at VGS=10 V), typical gate charge of 17 nC, and robust avalanche capability (100 % tested). The device is supplied in a TO‑220F package and is suitable for high‑power, high‑speed applications.
| Drain‑Source Voltage (V_DSS) | 300 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 6.0 A |
| Pulsed Drain Current (I_D) (Note 1) | 24 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| On‑Resistance (R_DS(on)) typical | 0.452 Ω @ V_GS=10 V |
| Gate Charge (Q_G) typical | 17 nC |
| Reverse Transfer Capacitance (C_rss) typical | 16 pF |
| Power Dissipation (P_D) @ 25 °C | 42 W |
The device is rated for a maximum drain‑source voltage of 300 V.
It can conduct up to 6.0 A continuously at a case temperature of 25 °C.
The typical gate charge is 17 nC.
The MOSFET is supplied in a TO‑220F package.