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The FQPF9N25 is an N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology, offering low on‑state resistance, fast switching, and 100 % avalanche testing. It is suited for high‑efficiency switching DC/DC converters and switch‑mode power supplies.
Key electrical specifications include a 250 V drain‑source rating, 6.7 A continuous drain current at 25 °C (42 A at 100 °C), low gate charge (~15.5 nC), low input capacitance (540 pF), and a TO‑220F package with a 45 W power dissipation rating.
| Drain‑Source Voltage (V_DSS) | 250 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 6.7 A |
| Pulsed Drain Current (I_D,pulse) | 26.8 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| Power Dissipation (P_D) @ 25 °C | 45 W |
| Package | TO‑220F |
The device is rated for a maximum drain‑source voltage of 250 V.
It can conduct up to 6.7 A continuously at a junction temperature of 25 °C.
The MOSFET is supplied in a TO‑220F package.