FQP9N25C/FQPF9N25C is a N-Channel enhancement mode power field effect transistor produced by Fairchild. It features low RDS(on), low Crss, fast switching and 100% avalanche testing. It is suitable for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
The FQP9N25C and FQPF9N25C are N‑Channel enhancement mode power MOSFETs built with Fairchild’s planar stripe DMOS technology. They are designed for high‑efficiency switching applications such as DC‑DC converters, SMPS, UPS inverters and motor controls.
The datasheet provides absolute maximum ratings, thermal characteristics, typical electrical performance curves, and package dimensions (TO‑220 and TO‑220F). Key parameters include a 250 V drain‑source rating, 8.8 A continuous drain current at 25 °C, low gate charge (≈26.5 nC), and a typical on‑resistance of 0.432 Ω at VGS=10 V.
| Drain‑Source Voltage (V_DSS) | 250 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 8.8 A |
| On‑Resistance (R_DS(on)) @ V_GS=10 V | 0.432 Ω |
| Typical Gate Charge (Q_g) | 26.5 nC |
| Package Type | TO‑220 (also TO‑220F) |
| Thermal Resistance Junction‑to‑Case (RθJC) | 1.69 °C·W⁻¹ |
| Power Dissipation (P_D) @ 25 °C | 74 W |
The maximum drain‑source voltage is 250 V.
It can conduct up to 8.8 A continuously at 25 °C.
The MOSFET is supplied in a TO‑220 (and TO‑220F) package.