The FQPF9N30 is a 300V N-channel MOSFET with a rated current of 6.0A and a switching resistance of 0.45 ohms, making it ideal for high-efficiency switching DC/DC converters and switch-mode power supplies.
The FQPF9N30 is a 300 V N‑channel enhancement‑mode power MOSFET produced with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching applications such as DC‑DC converters and switch‑mode power supplies.
Key specifications include a continuous drain current of 6 A at 25 °C, a pulsed drain current of 24 A, typical on‑resistance of 0.452 Ω at Vgs = 10 V, low gate charge (≈17 nC), and robust avalanche capability. The device is supplied in a TO‑220F package with thermal resistance of 2.98 °C·W (junction‑to‑case).
| Drain‑Source Voltage (VDS) | 300 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 6.0 A |
| Pulsed Drain Current | 24 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| On‑Resistance (RDS(on)) typical | 0.452 Ω @ VGS=10 V |
| Typical Gate Charge | 17 nC |
| Reverse Transfer Capacitance (CRSS) | 16‑20 pF |
| Power Dissipation (PD) @ 25 °C | 42 W |
| Thermal Resistance Junction‑to‑Case | 2.98 °C·W |
| Package | TO‑220F |
The device is rated for a maximum drain‑source voltage of 300 V.
It can handle a continuous drain current of 6 A at 25 °C.
Typical on‑resistance is 0.452 Ω when VGS = 10 V.
The MOSFET is supplied in a TO‑220F package.