The document provides information about the inventory, technical data, encyclopedic information, and hot news of QFET products. These products are characterized by high performance, strong reliability, and versatility.
The FQPF9N15 is a 150 V N‑Channel enhancement mode power MOSFET fabricated with Fairchild's planar stripe DMOS technology. It is designed for low‑voltage applications such as audio amplifiers, DC‑DC converters, and motor control, offering low on‑state resistance, fast switching, and high avalanche capability.
Key specifications include a continuous drain current of 6.9 A at 25 °C, a pulsed drain current of 27.6 A, an on‑resistance of 0.42 Ω at VGS = 10 V, and a total gate charge of 13 nC. The device is supplied in a TO‑220F package and operates over a temperature range of –55 °C to +175 °C.
| Drain‑Source Voltage (V_DSS) | 150 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | 6.9 A |
| Pulsed Drain Current (I_D) (Note 1) | 27.6 A |
| On‑Resistance (R_DS(on)) | 0.42 Ω @ V_GS=10 V |
| Total Gate Charge (Q_g) | 13 nC |
| Input Capacitance (C_iss) | 320 pF |
| Output Capacitance (C_oss) | 80 pF |
| Power Dissipation (P_D) at 25 °C | 44 W |
| Operating Temperature Range | -55 °C to +175 °C |
| Thermal Resistance Junction‑to‑Case | 3.38 °C·W |
The device is rated for a maximum drain‑source voltage of 150 V.
It can handle a continuous drain current of 6.9 A at 25 °C.
The typical total gate charge is 13 nC.
It is supplied in a TO‑220F package.