FQP9N25C/FQPF9N25C QFET ® N-Channel MOSFET is a high performance power field effect transistor produced by Fairchild. It features low on-state resistance, fast switching and high dv/dt capability. This device is suitable for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC inverters and uninterruptible power supplies.
The FQP9N25C and FQPF9N25C are N‑Channel enhancement mode power MOSFETs built with Fairchild’s planar stripe DMOS technology. They are optimized for low on‑state resistance, fast switching, and high‑energy pulse handling, making them suitable for DC‑DC converters, SMPS, UPS inverters, and motor control applications.
Key specifications include a 250 V drain‑source rating, 8.8 A continuous drain current at 25 °C (35.2 A pulsed), low gate charge of 26.5 nC, and a typical on‑resistance of 0.432 Ω at Vgs = 10 V. The devices are offered in TO‑220 and TO‑220F packages and feature robust avalanche and dv/dt performance.
| Drain-Source Voltage | 250 V |
|---|---|
| Gate-Source Voltage | ±30 V |
| On‑Resistance (Rds(on)) | 0.432 Ω @ Vgs=10 V |
| Typical Gate Charge | 26.5 nC |
Typical gate charge is 26.5 nC.
Yes, it is 100 % avalanche tested with a repetitive avalanche energy of 7.4 mJ.