The FQPF9N08L is an 80 V logic N‑Channel MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as automotive, DC‑DC converters, and motor control, offering low on‑state resistance and fast switching.
Key specifications include a continuous drain current of 7 A at 25 °C, pulsed current capability of 28 A, gate‑source voltage rating of ±20 V, and a maximum junction temperature of 175 °C. Thermal resistance values are 6.52 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient). The device is supplied in a TO‑220F package.
| Drain‑Source Voltage (V_DSS) | 80 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 7.0 A |
| Pulsed Drain Current (I_D) (Note 1) | 28 A |
| Gate‑Source Voltage (V_GS) | ±20 V |
| Power Dissipation (P_D) @ 25 °C | 23 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 6.52 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Total Gate Charge (Qg) | 6.1 nC (typical) |
| Input Capacitance (Ciss) | 215‑280 pF |
| Output Capacitance (Coss) | 70‑90 pF |
| Reverse Transfer Capacitance (Crss) | 16‑20 pF |
| Maximum Junction Temperature | 175 °C |
| Operating Temperature Range | -55 °C to +175 °C |
| Package Type | TO‑220F |
The device is rated for a maximum drain‑source voltage of 80 V.
It can conduct up to 7.0 A continuously at a case temperature of 25 °C.
The typical total gate charge is about 6.1 nC.
The MOSFET is supplied in a TO‑220F package.