FQPF8N60CF 600V N-Channel MOSFET is a low on-state resistance, low gate charge, fast switching, 100% avalanche tested product produced by Fairchild Semiconductor Corporation. It is suitable for high efficiency switched mode power supplies, active power factor correction, and half bridge topology electronic lamp ballasts.
The FQPF8N60CF is a N‑Channel enhancement mode power MOSFET built with Fairchild’s planar DMOS technology. It is designed for high‑efficiency switched‑mode power supplies, active power‑factor correction and half‑bridge lamp ballast applications. The device offers low on‑resistance, fast switching and robust avalanche capability.
The datasheet provides absolute maximum ratings, thermal characteristics, electrical parameters, typical performance curves and test circuit diagrams. Key specifications include a 600 V drain‑source rating, 6.26 A continuous drain current at 25 °C, low gate charge (≈28 nC) and a TO‑220F package.
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 6.26 A |
| Pulsed Drain Current | 25 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) @ 25 °C | 48 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 2.6 °C·W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 6.25 °C·W |
The device is rated for a maximum drain‑source voltage of 600 V.
It can conduct up to 6.26 A continuously at a case temperature of 25 °C.
The MOSFET is supplied in a TO‑220F package.