This document describes the features and characteristics of the Fairchild FQPF9N08L, an 80V logic N-channel MOSFET. The product features low on-state resistance, fast switching, low gate charge, low Crss, and improved dv/dt capability. It is suitable for low voltage applications such as automotive, high efficiency DC/DC converters, and DC motor control.
The FQPF9N08L is a logic‑level N‑Channel MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as automotive, DC‑DC converters, and motor control, offering low gate charge and low output capacitance.
Key features include a continuous drain current of 7 A at 25 °C, a pulsed rating of 28 A, a typical on‑resistance of 0.23 Ω, and an avalanche‑tested rating of 80 V. The device operates over a temperature range of –55 °C to +175 °C and is supplied in a TO‑220F package.
| Drain‑Source Voltage (VDS) | 80 V |
|---|---|
| Continuous Drain Current (Id) @ 25 °C | 7.0 A |
| Pulsed Drain Current (Id,pulse) | 28 A |
| Thermal Resistance, Junction‑to‑Case (Rjc) | 6.5 °C·W |
| Thermal Resistance, Junction‑to‑Ambient (Rja) | 62.5 °C·W |
The maximum drain‑source voltage is 80 V.
It can handle a continuous drain current of 7.0 A at 25 °C.