FQPF8N60CF 600V N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. It has the advantages of low on-state resistance, high switching speed, high reliability, etc. This product is suitable for high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topology.
The FQPF8N60CF is a 600 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar‑stripe DMOS technology. It offers low on‑resistance, low gate charge (typical 28 nC), fast switching and robust avalanche capability, making it suitable for high‑efficiency switched‑mode power supplies and power factor correction circuits.
The datasheet provides absolute maximum ratings, thermal characteristics, electrical parameters, typical performance curves, mechanical dimensions and package information (TO‑220F). It also includes test circuit diagrams for gate charge, switching and diode recovery, as well as trademark and disclaimer notices.
| Drain‑Source Voltage (V_DSS) | 600 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 6.26 A |
| Pulsed Drain Current | 25 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Power Dissipation (P_D) @ 25 °C | 48 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.6 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 6.25 °C·W |
| Total Gate Charge (Qg) typical | 28 nC |
| Single‑Pulse Avalanche Energy | 160 mJ |
| Repetitive Avalanche Energy | 14.7 mJ |
| Diode Recovery dv/dt | 45 V/µs |
| Operating Temperature Range | -55 °C to +150 °C |
| Maximum Lead Temperature for Soldering | 300 °C |
The device is rated for a maximum drain‑source voltage of 600 V.
It can conduct up to 6.26 A continuously at 25 °C.
The typical total gate charge is 28 nC.