FQPF8P10 is a 100V P-channel MOSFET with low gate charge (typical 12 nC), low Crss (typical 30 pF), fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.
The FQPF8P10 is a P‑Channel enhancement mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as audio amplifiers, high‑efficiency DC‑DC converters, and DC motor control.
Key features include a continuous drain current of -5.3 A at 25 °C, a maximum drain‑source voltage of -100 V, low gate charge (≈12 nC), low output capacitance (≈30 pF), fast switching, and a 175 °C maximum junction temperature. The device is supplied in a TO‑220F package with thermal resistance values of 5.36 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient).
| Drain‑Source Voltage (V_DSS) | -100 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | -5.3 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| On‑Resistance (R_DS(on)) | 0.41‑0.58 Ω (typical) |
| Junction‑to‑Case Thermal Resistance (RθJC) | 5.36 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Maximum Junction Temperature | 175 °C |
The maximum drain‑source voltage is -100 V.
It can handle a continuous drain current of -5.3 A at 25 °C.
Typical on‑resistance ranges from 0.41 Ω to 0.58 Ω.
The device is rated for a maximum junction temperature of 175 °C.