QFET QFET QFET QFET is an integrated circuit brand owned by Dinghao Electronics. QFET QFET QFET QFET products cover MOSFET, IGBT, SiC MOSFET, SiC JFET, SiC JBS, SiC PIN, GaN HEMT and other products, widely used in electric vehicles, new energy, rail transit, industrial control, 5G communications, photovoltaics and other fields.
The FQPF7N40 is a 400 V N‑channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low on‑state resistance, fast switching, and 100 % avalanche testing, making it suitable for high‑efficiency switch‑mode power supplies and lamp ballast applications.
Key specifications include a continuous drain current of 46 A at 25 °C, pulsed current up to 184 A, typical gate charge of 16.5 nC, and a power dissipation rating of 42 W. Thermal resistance is 2.98 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient). The device is supplied in a TO‑220F package.
| Drain‑Source Voltage (V_DSS) | 400 V |
|---|---|
| Continuous Drain Current (25 °C) | 46 A |
| Pulsed Drain Current | 184 A |
| Power Dissipation (25 °C) | 42 W |
| Junction‑to‑Case Thermal Resistance | 2.98 °C·W |
| Typical Gate Charge | 16.5 nC |
| On‑Resistance (V_GS=10 V, I_D=2.3 A) | 0.62 Ω |
The device is rated for a maximum drain‑source voltage of 400 V.
It can conduct up to 46 A continuously at a case temperature of 25 °C.
The typical gate charge is 16.5 nC.
The MOSFET can dissipate up to 42 W when the case temperature is 25 °C.