This document describes the features and characteristics of the 60V N-Channel MOSFET product FQPF65N06 produced by Fairchild Semiconductor Corporation. This product uses Fairchild's proprietary DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulses. It is suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
The FQPF65N06 is a 60 V N‑Channel enhancement mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as automotive, DC‑DC converters, and high‑efficiency power management in portable and battery‑operated products.
Key specifications include a continuous drain current of 40 A at 25 °C, a pulsed drain current rating of 160 A, typical on‑resistance of 0.016 Ω, gate charge of 48 nC, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package with thermal resistance values of 2.66 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient).
| Drain‑Source Voltage (VDS) | 60 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 40 A |
| Pulsed Drain Current | 160 A |
| Typical Gate Charge (Qg) | 48 nC |
| On‑Resistance (RDS(on)) | 0.016 Ω (typical) |
| Maximum Junction Temperature (Tj) | 175 °C |
| Power Dissipation (PD) @ 25 °C | 56 W |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 2.66 °C·W |
| Thermal Resistance, Junction‑to‑Ambient (RθJA) | 62.5 °C·W |
The device can handle a continuous drain current of 40 A at a junction temperature of 25 °C.
The typical gate charge is 48 nC.
The typical on‑resistance is 0.016 Ω when VGS = 10 V.
It is supplied in a TO‑220F package.