The document is a QFET product inventory information, including product models, inventory quantities, prices, pictures, etc.
The FQPF6N15 is a 150 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as audio amplifiers, DC‑DC converters and motor control, offering low on‑state resistance, fast switching and high avalanche capability.
Key specifications include a continuous drain current of 5 A at 25 °C, a pulsed rating of 20 A, typical on‑resistance of 0.62 Ω at Vgs = 10 V, low gate charge of 6.5 nC, and a maximum power dissipation of 38 W. The device is supplied in a TO‑220F package and operates from –55 °C to +175 °C.
| Drain-Source Voltage | 150 V |
|---|---|
| Continuous Drain Current (25 °C) | 5.0 A |
| Continuous Drain Current (100 °C) | 3.55 A |
| Pulsed Drain Current | 20 A |
| Gate-Source Voltage | ±25 V |
| On‑Resistance (typical) | 0.62 Ω |
| Gate Charge (typical) | 6.5 nC |
| Output Capacitance (Coss, typical) | 48 pF |
| Power Dissipation (25 °C) | 38 W |
| Junction‑to‑Case Thermal Resistance | 3.9 °C·W⁻¹ |
| Operating Temperature Range | -55 °C to +175 °C |
| Package | TO‑220F |
The device can handle 5.0 A continuously at 25 °C and 3.55 A at 100 °C.
Typical on‑resistance is 0.62 Ω when Vgs = 10 V.
The typical gate charge is 6.5 nC.
It is supplied in a TO‑220F package.