The document is about QFET technical data, introduces the features of QFET, the brand is Dinghao
The FQPF6N25 is a 250 V N‑Channel enhancement‑mode power MOSFET built with Fairchild's planar stripe DMOS technology. It offers low gate charge, low output capacitance, fast switching, and 100 % avalanche tested capability, making it suitable for high‑efficiency DC‑DC converters and switch‑mode power supplies.
The document lists absolute maximum ratings, detailed electrical characteristics such as drain‑source voltage, continuous and pulsed drain currents, gate‑source voltage limits, power dissipation, and thermal resistances. It also includes typical characteristic curves, test circuit diagrams, and mechanical package dimensions for the TO‑220F package.
| Drain‑Source Voltage (VDS) | 250 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 4.0 A |
| Pulsed Drain Current (ID) (Note 1) | 16 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| Power Dissipation (PD) @ 25 °C | 37 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 3.38 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Typical On‑Resistance (RDS(on)) | 0.082 Ω |
The device is rated for a maximum drain‑source voltage of 250 V.
It can conduct a continuous drain current of 4.0 A at 25 °C.
The typical total gate charge is 6.6 nC.
It is supplied in a TO‑220F package.