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The FQPF6N15 is a 150 V N‑Channel enhancement mode MOSFET built with Fairchild’s planar stripe DMOS technology. It is intended for low‑voltage applications such as audio amplifiers, DC‑DC converters, and motor control.
Key electrical characteristics include a continuous drain current of 5 A at 25 °C, a pulsed rating of 20 A, a typical on‑resistance of 0.62 Ω at Vgs = 10 V, and a maximum junction temperature of 175 °C. Thermal resistance values are 3.9 °C/W (junction‑to‑case) and 62.5 °C/W (junction‑to‑ambient).
| Drain‑Source Voltage (VDS) | 150 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 5.0 A |
| Pulsed Drain Current (ID,pulse) | 20 A |
| Gate‑Source Voltage (VGS) | ±25 V |
| On‑Resistance (RDS(on)) typical | 0.62 Ω @ VGS=10 V |
| Total Gate Charge (Qg) typical | 6.5 nC |
| Output Capacitance (Coss) typical | 48 pF |
| Power Dissipation (PD) @ 25 °C | 38 W |
| Maximum Junction Temperature (TJ) | 175 °C |
| Thermal Resistance Junction‑to‑Case (RθJC) | 3.9 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
The device is rated for a maximum drain‑source voltage of 150 V.
It can conduct up to 5.0 A continuously at a case temperature of 25 °C.
Typical on‑resistance is 0.62 Ω when VGS = 10 V.
The MOSFET can operate up to a junction temperature of 175 °C.