This document describes a 60V N-Channel MOSFET model FQPF65N06, which is produced using Fairchild's proprietary DMOS technology. It features low on-state resistance, superior switching performance, and high energy pulse withstand capability. The device is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
The FQPF65N06 is a 60 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is optimized for low on‑state resistance, fast switching, and high‑energy pulse handling, making it suitable for automotive, DC‑DC converters, and portable power‑management applications.
Key specifications include a continuous drain current of 40 A at 25 °C, a pulsed rating of 160 A, a typical on‑resistance of 0.016 Ω, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package and includes detailed electrical characteristics, typical performance curves, and test circuit diagrams.
| Drain‑Source Voltage (VDS) | 60 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 40 A |
| Pulsed Drain Current (ID,pulse) | 160 A |
| Typical Gate Charge (Qg) | 48 nC |
| Typical On‑Resistance (RDS(on)) | 0.016 Ω |
| Power Dissipation (PD) at 25 °C | 56 W |
| Maximum Junction Temperature (Tj) | 175 °C |
The device can handle a continuous drain current of 40 A at 25 °C (28.3 A at 100 °C).
The FQPF65N06 is rated for a pulsed drain current of 160 A.
The maximum junction temperature is rated at 175 °C.
It is supplied in a TO‑220F surface‑mount package.