FQPF60N03L 30V LOGIC N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation using its proprietary planar stripe DMOS technology. It features low on-state resistance, superior switching performance, and high energy pulse tolerance, and is well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.
The FQPF60N03L MOSFET is a 30 V logic N‑Channel device built with Fairchild’s planar stripe DMOS technology, offering low on‑state resistance, fast switching, and 100 % avalanche testing. It is suited for low‑voltage applications such as DC/DC converters and power management in portable, battery‑operated products.
Key specifications include a continuous drain current of 39 A at 25 °C, pulsed current of 156 A, power dissipation of 42 W, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package with thermal resistance values of 3.54 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient).
| Drain-Source Voltage (Vds) | 30 V |
|---|---|
| Continuous Drain Current (Id) @ 25 °C | 39 A |
| Continuous Drain Current (Id) @ 100 °C | 27.6 A |
| Pulsed Drain Current (Id) (Note 1) | 156 A |
| Gate-Source Voltage (Vgs) | ±20 V |
| Power Dissipation (Pd) @ 25 °C | 42 W |
| Maximum Junction Temperature (Tj) | 175 °C |
| Thermal Resistance, Junction‑to‑Case (Rjc) | 3.54 °C·W |
| Thermal Resistance, Junction‑to‑Ambient (Rja) | 62.5 °C·W |
| Reverse Transfer Capacitance (Crss) | 155 pF |
The device can handle a continuous drain current of 39 A at 25 °C.
The maximum power dissipation is 42 W when the junction temperature is 25 °C.
It is supplied in a TO‑220F package.
The device is rated for a maximum junction temperature of 175 °C.