This document describes the features and characteristics of May 2001 QFET TM FQPF60N03L, a 30V LOGIC N-Channel MOSFET, including low voltage applications, low gate charge, and fast switching.
The FQPF60N03L MOSFET is a 30 V logic N‑channel device built with Fairchild’s planar stripe DMOS technology, offering low on‑state resistance and fast switching for low‑voltage applications such as DC/DC converters and portable power management. It is rated for 39 A continuous drain current at 25 °C and can handle high energy pulses in avalanche mode.
Key features include a typical gate charge of 18.5 nC, low output capacitance (≈155 pF), a maximum junction temperature of 175 °C, and a TO‑220F package. The datasheet provides absolute maximum ratings, thermal characteristics, and detailed electrical parameters for design use.
| Drain‑Source Voltage (VDS) | 30 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 39 A |
| Gate‑Source Voltage (VGS) | ±20 V |
| Power Dissipation (PD) at 25 °C | 42 W |
| Junction‑to‑Case Thermal Resistance (RJC) | 3.54 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RJA) | 62.5 °C/W |
| Typical Gate Charge (Qg) | 18.5 nC |
| Reverse Transfer Capacitance (Crss) | 155 pF |
The device can conduct up to 39 A continuously at a case temperature of 25 °C.
The MOSFET is rated for a gate‑source voltage of ±20 V.
It is supplied in a TO‑220F surface‑mount package.
The device is rated for operation up to 175 °C.