FQPF5P20 is a P-channel MOSFET produced by Fairchild Semiconductor. Its maximum voltage is 200V and its rated current is 3.4A. It has excellent switching characteristics and is suitable for high-efficiency switching DC/DC converters.
The FQPF5P20 is a 200 V P‑Channel enhancement mode power MOSFET built with Fairchild's planar stripe DMOS technology. It is designed for high‑efficiency switching DC/DC converters, offering low on‑state resistance, fast switching, and robust avalanche capability.
Key features include a continuous drain current of 3.4 A at 25 °C, low gate charge (~10 nC), low output capacitance, and a TO‑220F package with detailed thermal and electrical characteristics for reliable operation across a wide temperature range.
| Drain‑Source Voltage (VDS) | -200 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | -3.4 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) at 25 °C | 38 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 3.29 °C·W |
| Input Capacitance (Ciss) | 330‑430 pF |
| Total Gate Charge (Qg) | ~10 nC |
The device can handle a continuous drain current of 3.4 A at 25 °C (2.15 A at 100 °C).
It is supplied in a TO‑220F package.
Yes, it is 100 % avalanche tested.