FQPF5P20 is a 200V P-channel MOSFET produced by Fairchild, which has the characteristics of low gate charge, low reverse capacitance, fast switching and 100% avalanche testing.
The FQPF5P20 is a P‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching DC/DC converters, offering low on‑state resistance, fast switching, and robust avalanche performance.
Key electrical and thermal specifications include a -200 V drain‑source rating, -3.4 A continuous drain current at 25 °C, 38 W power dissipation, and a junction‑to‑case thermal resistance of 3.29 °C/W. The device is supplied in a TO‑220F package and is tested for 100 % avalanche capability.
| Drain‑Source Voltage (V_DSS) | -200 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | -3.4 A |
| Pulsed Drain Current (I_D,pulse) | -13.6 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Power Dissipation (P_D) at 25 °C | 38 W |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 3.29 °C/W |
| Thermal Resistance, Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
The device is rated for a maximum drain‑source voltage of -200 V.
It can conduct up to -3.4 A continuously at a case temperature of 25 °C.
The MOSFET can dissipate up to 38 W when the case temperature is 25 °C.
The junction‑to‑case thermal resistance is 3.29 °C/W.