FQPF5N90 is a N-Channel MOSFET produced by Fairchild with the characteristics of low on-state resistance, low gate capacitance, fast switching, 100% avalanche testing and improved dv/dt capability.
The FQPF5N90 is a 900 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, offering low on‑state resistance, low gate charge, and fast switching performance.
Key specifications include a continuous drain current of 3 A at 25 °C, a pulsed drain current of 12 A, a gate‑source voltage rating of ±30 V, and a maximum power dissipation of 51 W. Thermal resistance values are 2.45 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient).
| Drain‑Source Voltage (V_DSS) | 900 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 3.0 A |
| Gate‑Source Voltage (V_GS) Rating | ±30 V |
| Maximum Power Dissipation (P_D) @ 25 °C | 51 W |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 2.45 °C·W |
| Thermal Resistance, Junction‑to‑Ambient (RθJA) | 62.5 °C·W |
The device can withstand up to 900 V drain‑source voltage.
It is rated for a continuous drain current of 3.0 A at 25 °C.
The MOSFET is rated for a gate‑source voltage of ±30 V.