FQPF5N90 is a 900V N-channel power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse tolerance. It is suitable for high efficiency switch mode power supply.
The FQPF5N90 is a 900 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low gate charge, low output capacitance, fast switching, and 100 % avalanche testing, making it suitable for high‑efficiency switch‑mode power supplies.
The datasheet provides absolute maximum ratings, thermal characteristics, electrical parameters, switching performance, and package dimensions (TO‑220F). Test circuit diagrams illustrate gate‑charge, resistive switching, and diode recovery measurements.
| Drain‑Source Voltage (V_DSS) | 900 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | 3.0 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| Power Dissipation (P_D) at 25 °C | 51 W |
| Junction‑to‑Case Thermal Resistance (R_JC) | 2.45 °C·W |
| Junction‑to‑Ambient Thermal Resistance (R_JA) | 62.5 °C·W |
| Typical Gate Charge (Q_g) | 31 nC |
| Typical Output Capacitance (C_oss) | 145 pF |
The FQPF5N90 is rated for a maximum drain‑source voltage of 900 V.
It can conduct up to 3.0 A continuously at a case temperature of 25 °C.
The typical gate charge is 31 nC.
The MOSFET is supplied in a TO‑220F package.