This document describes the features and characteristics of FQP5N60C/FQPF5N60C 600V N-Channel MOSFET, including low on-state resistance, fast switching, and low gate charge.
The Fairchild FQP5N60C and FQPF5N60C are N‑Channel enhancement mode power MOSFETs built with planar stripe DMOS technology. They are designed for high‑efficiency switched‑mode power supplies, active power factor correction, and half‑bridge lamp ballast applications.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, test circuit diagrams, and package dimensions for the TO‑220 and TO‑220F packages. It also includes trademark information, legal disclaimer, and product status definitions.
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Gate‑Source Voltage (VGS) | ±30 V |
| On‑Resistance (RDS(on)) | 0.252 Ω @ VGS=10 V |
| Total Gate Charge (Qg) | 15‑19 nC |
The maximum drain‑source voltage is 600 V.
The typical total gate charge is about 15 nC (up to 19 nC).