This product is a 600V N-channel MOSFET with a continuous current of 4.5A, a 2.5 ohm on-state resistance and a 15 nC gate charge.
The FQP5N60C and FQPF5N60C are N‑Channel enhancement mode power MOSFETs built with Fairchild’s planar stripe DMOS technology. They are designed for high‑efficiency switched‑mode power supplies, active power factor correction, and electronic lamp ballasts.
Key specifications include a 600 V drain‑source rating, 4.5 A continuous drain current at 25 °C, low gate charge of 15 nC, and a typical on‑resistance of 0.252 Ω at Vgs = 10 V. The devices are supplied in TO‑220 and TO‑220F packages with detailed thermal resistance values and package dimensions.
| Drain-Source Voltage | 600 V |
|---|---|
| Gate-Source Voltage | +30 V |
| Gate Charge (Qg) | 15 nC |
The device is rated for a maximum drain‑source voltage of 600 V.
The typical gate charge is 15 nC.
The MOSFET is available in TO‑220 and TO‑220F packages.