This product is a logic N-channel MOSFET with a rated voltage of 100V and a maximum current of 25.8A. Its features are fast switching speed, low on-state resistance, and high pulse energy withstand ability. This product is suitable for applications such as high efficiency switching DC/DC converters and DC motor control.
The FQAF33N10L is a logic‑level N‑Channel MOSFET built with Fairchild’s planar stripe DMOS technology. It is optimized for low on‑state resistance, fast switching, and high‑energy pulse capability, making it suitable for low‑voltage DC/DC converters and motor‑control applications.
The datasheet provides absolute maximum ratings, thermal characteristics, electrical parameters, typical performance curves, and package dimensions (TO‑3PF). Key specifications include a 100 V drain‑source voltage, 25.8 A continuous drain current at 25 °C, and a typical Rds(on) of 0.052 Ω at Vgs = 10 V.
| Drain‑Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (Id) @ 25 °C | 25.8 A |
| Pulsed Drain Current (Id) (Note 1) | 103.2 A |
| On‑Resistance (Rds(on)) typical | 0.052 Ω @ Vgs=10 V |
| Gate Charge (Qg) typical | 30 nC |
| Reverse Transfer Capacitance (Crss) typical | 70 pF |
| Maximum Junction Temperature | 175 °C |
| Thermal Resistance Junction‑to‑Case | 1.8 °C/W |
| Thermal Resistance Junction‑to‑Ambient | 40 °C/W |
The device is rated for a maximum drain‑source voltage of 100 V.
It can conduct up to 25.8 A continuously at a case temperature of 25 °C.
The typical on‑resistance is about 0.052 Ω when Vgs is 10 V.
The MOSFET is supplied in a TO‑3PF package.