This document describes the features and characteristics of the FQAF33N10 100V N-Channel MOSFET produced by Fairchild Semiconductor International. These MOSFETs are made using advanced DMOS technology and have low on-state resistance, superior switching performance, and high energy pulse withstand capability. They are suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
The FQAF33N10 is a 100 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low on‑state resistance, fast switching, and high avalanche capability, making it suitable for low‑voltage applications such as audio amplifiers, DC‑DC converters and motor control.
The document provides absolute maximum ratings, thermal characteristics, electrical parameters, typical performance curves, and test circuit diagrams. Package dimensions for the TO‑3PF case are also listed, along with trademark and disclaimer information.
| Drain‑Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 25.8 A |
| Pulsed Drain Current (ID) (Note 1) | 103.2 A |
| Gate‑Source Voltage (VGS) | ±25 V |
| Power Dissipation (PD) @ 25 °C | 83 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 1.80 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 40 °C/W |
| On‑Resistance (RDS(on)) typical | 0.052 Ω @ VGS=10 V |
| Total Gate Charge (Qg) typical | 38 nC |
The device can handle a continuous drain current of 25.8 A at a case temperature of 25 °C.
The FQAF33N10 is rated for a maximum drain‑source voltage of 100 V.
It can dissipate up to 83 W when the case temperature is 25 °C.
Typical on‑resistance is about 0.052 Ω at a gate‑source voltage of 10 V.