This document introduces Dinghao's QFET product information, including stock, technical data, encyclopedia information, hot news, etc.
The FQAF28N15 is a 150 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as audio amplifiers, DC‑DC converters, and motor control, offering low on‑state resistance and fast switching.
The datasheet lists absolute maximum ratings, thermal characteristics, and detailed electrical parameters, including drain current limits, gate charge, and capacitance values. It also includes typical characteristic curves and test circuit diagrams for gate charge, inductive switching, and diode recovery tests.
| Drain‑Source Voltage (VDS) | 150 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 22 A |
| Continuous Drain Current (ID) at 100 °C | 156 A |
| Pulsed Drain Current (ID) (Note 1) | 88 A |
| Gate‑Source Voltage (VGS) | ±25 V |
| Power Dissipation (PD) at 25 °C | 102 W |
| Maximum Junction Temperature (TJ) | 175 °C |
| RDS(on) (typical) | 0.092 Ω @ VGS=10 V |
| Junction‑to‑Case Thermal Resistance (RθJC) | 1.47 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 40 °C·W |
The device can handle a continuous drain current of 22 A at 25 °C.
The typical on‑state resistance is 0.092 Ω when VGS = 10 V.
The MOSFET is rated for a maximum junction temperature of 175 °C.
The part can dissipate up to 102 W at a case temperature of 25 °C.