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The FQAF22N30 is a 300 V N‑Channel enhancement mode power MOSFET designed with Fairchild’s planar stripe DMOS technology. It offers low on‑state resistance, low gate charge, and fast switching suitable for high‑efficiency DC/DC converters and switch‑mode power supplies.
Key specifications include a continuous drain current of 16 A at 25 °C, a pulsed current rating of 64 A, and a power dissipation of 100 W. Thermal resistance values are 1.25 °C·W (junction‑to‑case) and 40 °C·W (junction‑to‑ambient), with typical gate charge of 47 nC and capacitances ranging from 350 pF to 2.2 nF.
| Drain‑Source Voltage (V_DSS) | 300 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 16 A |
| Continuous Drain Current (I_D) @ 100 °C | 10.1 A |
| Pulsed Drain Current | 64 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| Power Dissipation (P_D) @ 25 °C | 100 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 1.25 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 40 °C·W |
| Typical Gate Charge (Q_g) | 47 nC |
| Output Capacitance (Coss) | 350‑450 pF |
| On‑Resistance (R_DS(on)) @ V_GS=10 V | 0.12‑0.16 Ω |
| Single Pulsed Avalanche Energy | 1000 mJ |
| Avalanche Current | 16 A |
| Diode Recovery dv/dt | 45 V/µs |
The device can withstand up to 300 V drain‑source voltage.
It is rated for a continuous drain current of 16 A at 25 °C.
Typical gate charge is 47 nC.
The MOSFET can dissipate up to 100 W at 25 °C.