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The FQAF22N30 is a 300 V N‑Channel enhancement mode power MOSFET designed for high‑efficiency switching applications such as DC/DC converters and switch‑mode power supplies. It features low gate charge, low output capacitance, fast switching, and robust avalanche capability.
Key specifications include a continuous drain current of 16 A at 25 °C, a pulsed drain current rating of 64 A, a typical on‑resistance of 0.12 Ω at Vgs = 10 V, and a total gate charge of about 47 nC. The device can dissipate up to 100 W (25 °C) and operates over a temperature range of –55 °C to +150 °C.
| Drain‑Source Voltage (VDS) | 300 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 16 A |
| Pulsed Drain Current (ID) (Note 1) | 64 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| On‑Resistance (RDS(on)) typical | 0.12 Ω |
| Power Dissipation (PD) @ 25 °C | 100 W |
The device is rated for a maximum drain‑source voltage of 300 V.
It can conduct up to 16 A continuously at a case temperature of 25 °C.
The typical on‑resistance is about 0.12 Ω.