The document provides information about the stock inventory, technical data, encyclopedia information, and hot news of Dinghao company. It mainly describes the features and characteristics of QFET products.
The FQAF19N20L is a 200 V logic N‑Channel MOSFET produced with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching in DC/DC converters, SMPS, and motor‑control applications. The device offers low gate charge, low output capacitance, and fast switching performance.
Key features include a continuous drain current of 16 A at 25 °C, a pulsed rating of 64 A, an on‑resistance of 0.142 Ω at Vgs = 10 V, and an avalanche energy rating of 250 mJ. The MOSFET is supplied in a TO‑3PF package and includes detailed electrical and thermal characteristics for design integration.
| Drain‑Source Voltage (VDS) | 200 V |
|---|---|
| Continuous Drain Current (Id) @ 25 °C | 16 A |
| Continuous Drain Current (Id) @ 100 °C | 10.1 A |
| Pulsed Drain Current (Id) (Note 1) | 64 A |
| Gate‑Source Voltage (VGS) | +20 V |
| On‑Resistance (RDS(on)) @ VGS=10 V | 0.142 Ω |
| Total Gate Charge (Qg) | 27 nC typical |
| Power Dissipation (PD) @ 25 °C | 85 W |
| Thermal Resistance, Junction‑to‑Case | 1.47 °C/W |
| Thermal Resistance, Junction‑to‑Ambient | 40 °C/W |
The device can conduct up to 16 A continuously at a case temperature of 25 °C.
It is rated for a single‑pulse avalanche energy of 250 mJ and a repetitive avalanche energy of 8.5 mJ.
The typical total gate charge is 27 nC.