QFET QFET QFET QFET is a high-performance, low-cost MOSFET device launched by Dinghao Electronics. It has the advantages of high switching speed, low on-resistance and low gate charge.
The FQAF17N40 is a 400 V N‑Channel enhancement‑mode power MOSFET built with Fairchild's planar stripe DMOS technology. It offers low gate charge, low output capacitance, fast switching, and 100 % avalanche capability, making it suitable for high‑efficiency switch‑mode power supplies and lamp ballasts.
The document lists absolute maximum ratings, detailed electrical characteristics (drain current, breakdown voltage, capacitances, gate charge), thermal parameters, and the TO‑3PF package dimensions. It also includes trademark, disclaimer, and product status information.
| Drain‑Source Voltage (V_DSS) | 400 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | 12.2 A |
| Pulsed Drain Current (I_D) (Note 1) | 48.8 A |
| Power Dissipation (P_D) at 25 °C | 100 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 1.25 °C·W |
The maximum drain‑source voltage is 400 V.
It can handle a continuous drain current of 12.2 A at 25 °C.