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The FQAF19N20 is a 200 V N‑Channel enhancement mode power MOSFET built with Fairchild's planar stripe DMOS technology. It offers low on‑state resistance, fast switching, and high avalanche capability, making it suitable for DC‑DC converters, SMPS, UPS, and motor‑control applications.
The document provides absolute maximum ratings, electrical characteristics, thermal data, typical performance curves, and package dimensions, along with legal notices and trademark information.
| Drain‑Source Voltage (VDS) | 200 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 15 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) @ 25 °C | 85 W |
The device is rated for a maximum drain‑source voltage of 200 V.
It can conduct up to 15 A continuously at a case temperature of 25 °C.