This manual introduces the features and characteristics of Dinghao QFET products in detail, and provides application solutions
The FQAF19N20L is a 200 V logic‑level N‑channel MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency DC/DC converters, switch‑mode power supplies and motor‑control applications, offering low gate charge, low output capacitance and fast switching.
Key specifications include a continuous drain current of 16 A at 25 °C, pulsed current up to 64 A, typical on‑resistance of 0.12 Ω, gate charge around 27 nC, and a power dissipation rating of 85 W. The datasheet also provides typical characteristic curves, test circuit diagrams, and package dimensions for the TO‑3PF package.
| Drain‑Source Voltage (V_DSS) | 200 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | 16 A |
| Pulsed Drain Current (I_D) (Note 1) | 64 A |
| Gate Charge (Qg) typical | 27 nC |
| Power Dissipation (P_D) at 25 °C | 85 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 1.47 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 40 °C·W |
| Single Pulsed Avalanche Energy | 250 mJ |
The device is rated for a maximum drain‑source voltage of 200 V.
The typical gate charge is 27 nC.
It can dissipate up to 85 W at a case temperature of 25 °C.
Yes, the device is 100 % avalanche tested.