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The FQAF14N30 is a 300 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching in DC/DC converters and switch‑mode power supplies.
Key specifications include a continuous drain current of 11.4 A at 25 °C, a pulsed current rating of 45.6 A, an on‑resistance of 0.29 Ω at VGS = 10 V, and low gate charge (≈30 nC). The device is supplied in a TO‑3PF package with detailed thermal and electrical ratings.
| Drain‑Source Voltage (V_DSS) | 300 V |
|---|---|
| Continuous Drain Current @25 °C (I_D) | 11.4 A |
| Continuous Drain Current @100 °C (I_D) | 7.2 A |
| Pulsed Drain Current (I_DM) | 45.6 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| On‑Resistance (R_DS(on)) | 0.29 Ω @ V_GS=10 V |
| Typical Gate Charge (Q_g) | 30 nC |
| Output Capacitance (C_oss) | 260 pF |
| Junction‑to‑Case Thermal Resistance (RθJC) | 1.39 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 40 °C·W |
| Power Dissipation (P_D) @25 °C | 90 W |
The device can withstand up to 300 V between drain and source.
The typical on‑resistance is 0.29 Ω when the gate‑source voltage is 10 V.
Continuous drain current is 11.4 A at 25 °C (7.2 A at 100 °C) and the pulsed rating is 45.6 A.
It is supplied in a TO‑3PF package with listed dimensions.