Fairchild FQAF15N70 MOSFET Datasheet

This document introduces the inventory, technical information, encyclopedia information, and hot news of Dinghao Company. The main product is QFET.


Fairchild FQAF15N70 MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
721 KB
Published
12 April, 2012
Updated
29 September, 2023
MD5 checksum
713D5B5E0BC460B347C3D61CC1AEECB8

About this manual

The FQAF15N70 is a 700 V N‑Channel enhancement‑mode MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, offering low on‑resistance, low gate charge, and fast switching performance.

Key specifications include a 700 V drain‑source rating, 9.5 A continuous drain current at 25 °C, 0.56 Ω typical on‑resistance at Vgs = 10 V, and a total gate charge of about 90 nC. The device is supplied in a TO‑3PF package with detailed thermal and avalanche ratings.

What's inside

  • General Description
  • Features
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Typical Characteristics
  • Gate Charge Test Circuit
  • Peak Diode Recovery dv/dt Test Circuit
  • Package Dimensions
  • Trademarks
  • Product Status Definitions

Specifications

Drain‑Source Voltage (VDS)700 V

Frequently asked questions

What is the maximum drain‑source voltage for the FQAF15N70?

The device is rated for a maximum drain‑source voltage of 700 V.

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