FQA9P25 is a 250V P-Channel MOSFET from Fairchild with low RDS(on), low Crss and fast switching.
The FQA9P25 is a -250 V P‑Channel enhancement‑mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching in DC‑DC converters, offering fast switching and improved dv/dt capability.
Key specifications include a continuous drain current of -10.5 A at 25 °C, on‑resistance of 0.62 Ω at V_GS = ‑10 V, total gate charge of 29–38 nC, and avalanche energy rating of 650 mJ. The device is supplied in a TO‑3P package with thermal resistance values of 0.83 °C/W (junction‑to‑case) and 40 °C/W (junction‑to‑ambient).
| Drain-Source Voltage (V_DSS) | -250 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | -10.5 A |
| Gate-Source Voltage (V_GS) Rating | +30 V |
| On‑Resistance (R_DS(on)) @ V_GS = -10 V | 0.62 Ω |
| Reverse Transfer Capacitance (C_rss) | 27–35 pF |
| Power Dissipation (P_D) at 25 °C | 150 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 0.83 °C/W |
| Case‑to‑Sink Thermal Resistance (RθCS) | 0.24 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 40 °C/W |
The device is rated for a maximum drain‑source voltage of -250 V.
The on‑resistance is 0.62 Ω when V_GS is -10 V.
It can conduct a continuous drain current of -10.5 A at 25 °C.