This document describes the features and characteristics of the FQAF12N60 600V N-Channel MOSFET product produced by Fairchild, including low on-state resistance, superior switching performance, and reliability under high energy pulses. It is suitable for high-efficiency switch mode power supplies.
The FQAF12N60 is a 600 V N‑Channel enhancement mode power MOSFET designed for high‑efficiency switch‑mode power supplies. It features low gate charge, low output capacitance, and fast switching performance.
Key specifications include a 600 V drain‑source rating, 7.8 A continuous drain current at 25 °C, and a maximum power dissipation of 100 W. The datasheet also details thermal resistance, capacitance, and diode characteristics, along with typical test circuit waveforms.
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 7.8 A |
| Pulsed Drain Current (ID,pulse) | 31 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| Power Dissipation (PD) @ 25 °C | 100 W |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 1.25 °C/W |
| Gate Charge (Qg) typical | 42 nC |
The device is rated for a maximum drain‑source voltage of 600 V.
The typical gate charge is about 42 nC.
It can dissipate up to 100 W when the case temperature is 25 °C.
The continuous drain current at 25 °C is 7.8 A.