The document provides information about Dinghao's products, including stock inventory, technical data, encyclopedia information, and hot news. The product is the QFET model, which is known for its high performance and stability.
The FQAF11N40 is a 400 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It features low gate charge, low output capacitance, fast switching, and high avalanche capability, making it suitable for high‑efficiency switch‑mode power supplies and electronic lamp ballasts.
Key electrical specifications include a continuous drain current of 8.8 A at 25 °C, a drain‑source breakdown voltage of 400 V, a typical total gate charge of 27 nC, and a power dissipation rating of 90 W. The device is supplied in a TO‑3PF package with thermal resistance of 1.39 °C/W (junction‑to‑case) and includes detailed characteristic curves for on‑resistance, capacitance, and transient thermal response.
| Drain‑Source Voltage (VDS) | 400 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 8.8 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) at 25 °C | 90 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 1.39 °C/W |
| Total Gate Charge (Qg) typical | 27 nC |
The device can handle a continuous drain current of 8.8 A at 25 °C.
The drain‑source breakdown voltage is rated at 400 V.
The typical total gate charge is 27 nC.