This datasheet provides data information of FQPF12N20L, including overview, features, specifications and parameters.
The FQPF12N20L MOSFET is an N‑Channel enhancement mode power transistor built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching in DC/DC converters, SMPS and motor‑control applications, offering low gate charge and low on‑state resistance.
Key specifications include a 200 V drain‑source rating, 8.2 A continuous drain current at 25 °C, 32.8 A pulsed current, typical gate charge of 16 nC, and a TO‑220F package with thermal resistance of 2.78 °C·W (junction‑to‑case). The datasheet provides detailed electrical characteristics, test circuits, and package dimensions.
| Drain‑Source Voltage (V_DSS) | 200 V |
|---|---|
| Continuous Drain Current (I_D) @ 25°C | 8.2 A |
| Pulsed Drain Current (I_DM) | 32.8 A |
| Typical Gate Charge (Q_g) | 16 nC |
| On‑Resistance (R_DS(on)) | 0.282 Ω (typical at V_GS=10 V) |
| Reverse Transfer Capacitance (C_rss) | 17‑22 pF |
| Thermal Resistance Junction‑to‑Case (RθJC) | 2.78 °C·W |
| Package | TO‑220F |
The device is rated for a maximum drain‑source voltage of 200 V.
It can conduct up to 8.2 A continuously at a case temperature of 25 °C.
The typical gate charge is 16 nC.
It is supplied in a TO‑220F package.