FQPF12N60CT 600V N-Channel MOSFET is a power field effect transistor produced by Fairchild Semiconductor Corporation using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
The FQPF12N60CT is a 600 V N‑Channel enhancement‑mode MOSFET designed for high‑efficiency switched‑mode power supplies, active power factor correction and half‑bridge lamp ballast applications. It uses Fairchild's planar stripe DMOS technology to achieve low on‑resistance, fast switching and robust avalanche capability.
Key specifications include a 600 V drain‑source rating, 12 A continuous drain current, 0.65 Ω RDS(on) at VGS=10 V, typical gate charge of 48 nC and Crss of 21 pF. The datasheet also provides thermal characteristics, electrical limits, test circuit diagrams and package dimensions for the TO‑220F package.
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) | 12 A |
| On‑Resistance (RDS(on)) | 0.65 Ω @ VGS=10 V |
| Typical Gate Charge (Qg) | 48 nC |
| Typical Reverse Transfer Capacitance (Crss) | 21 pF |
| Power Dissipation (PD) at 25 °C | 51 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.43 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C/W |
The MOSFET is rated for a maximum drain‑source voltage of 600 V.
It can conduct up to 12 A continuously at a 25 °C case temperature.
The typical total gate charge is 48 nC.