FQPF13N10 is a 100V N-channel MOSFET with 8.7A continuous current, 100V drain-source voltage, 0.18Ω on-state resistance, low gate charge and low Crss, 100% avalanche tested and 175°C maximum junction temperature.
The FQPF13N10 is a 100 V N‑Channel enhancement‑mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is intended for low‑voltage applications such as audio amplifiers, high‑efficiency DC‑DC converters, and DC motor control.
Key specifications include a continuous drain current of 8.7 A at 25 °C, a pulsed drain current of 34.8 A, low gate charge (typical 12 nC), and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package and features a low on‑resistance and fast switching performance.
| Drain‑Source Voltage (V_DSS) | 100 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 8.7 A |
| Pulsed Drain Current (I_D) (Note 1) | 34.8 A |
| Gate‑Source Voltage (V_GS) | ±25 V |
| Power Dissipation (P_D) @ 25 °C | 30 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 5.0 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Maximum Junction Temperature | 175 °C |
| Typical Gate Charge (Q_g) | 12 nC |
The device is rated for a maximum drain‑source voltage of 100 V.
It can conduct up to 8.7 A continuously at a junction temperature of 25 °C.
The typical gate charge is about 12 nC.