FQPF12P10 is a P-channel MOSFET produced by Fairchild. It has low gate charge, low on-state resistance, fast switching, 100% avalanche testing and other features. It is suitable for applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.
The FQPF12P10 is a P‑Channel enhancement‑mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is optimized for low on‑state resistance and fast switching, making it suitable for audio amplifiers, high‑efficiency DC‑DC converters, and DC motor control.
Key specifications include a -100 V drain‑source breakdown voltage, 8.2 A continuous drain current at 25 °C, 32.8 A pulsed current capability, a typical on‑resistance of 0.24‑0.29 Ω, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package with thermal resistance of 3.95 °C·W (junction‑to‑case).
| Drain‑Source Voltage (V_DSS) | -100 V |
|---|---|
| Continuous Drain Current (Tj=25 °C) | 8.2 A |
| Pulsed Drain Current | 32.8 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| On‑Resistance (typical) | 0.24‑0.29 Ω |
| Thermal Resistance, Junction‑to‑Case | 3.95 °C·W |
| Maximum Junction Temperature | 175 °C |
The device can handle a continuous drain current of 8.2 A at a junction temperature of 25 °C.
The gate threshold voltage ranges from -2.0 V to -4.0 V.
Typical total gate charge is 21 nC.
It is supplied in a TO‑220F package.