FQPF12N20L 200V LOGIC N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. This device has low on-state resistance, superior switching performance and high energy pulse withstand capability, suitable for high efficiency switching DC/DC converters, switch mode power supply, motor control and other fields.
The FQPF12N20L MOSFET is a N‑Channel enhancement mode power transistor built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching in DC/DC converters, SMPS, and motor‑control applications.
Key specifications include a 200 V drain‑source rating, 8.2 A continuous drain current at 25 °C, low gate charge (≈16 nC), low output capacitance, and fast switching performance. The device also features 100 % avalanche testing and can operate over a temperature range of –55 °C to +150 °C.
| Drain‑Source Voltage (V_DSS) | 200 V |
|---|---|
| Continuous Drain Current (I_D) @25 °C | 8.2 A |
| Pulsed Drain Current | 32.8 A |
| Gate‑Source Voltage (V_GS) | ±20 V |
| On‑Resistance (R_DS(on)) | 0.282 Ω typ @ V_GS=10 V |
| Input Capacitance (C_iss) | 830‑1080 pF |
| Gate‑Charge (Q_g) | 16‑21 nC |
| Power Dissipation (P_D) @25 °C | 45 W |
| Low Gate Charge | ≈16 nC typ |
| Low Reverse Transfer Capacitance (C_oss) | 17 pF typ |
The device can handle a continuous drain current of 8.2 A at a case temperature of 25 °C.
It is rated for a single‑pulse avalanche energy of 210 mJ and a repetitive avalanche energy of 45 mJ.
The typical total gate charge is between 16 nC and 21 nC.
The on‑resistance is approximately 0.282 Ω at V_GS=10 V.